ICMOVPE XXII Topics
- Fundamental Growth Studies and Modelling of Epitaxial Processes
- III-V Materials and Devices (Nitride, Arsenide, etc.)
- II-VI Materials and Devices (CdTe, ZnSe, ZnS, etc.)
- IV-IV Materials and Devices (SiC, SiGe, GeSn, etc.)
- Oxide and Dielectrics (Ga2O3, TCO, etc.)
- Low Dimensional Structures (Dots, Wires, Wells, etc.)
- 2D Materials and Devices (TMDC, h-BN, etc.)
- van der Waals Heterostructures (2D/2D or 2D/3D Heterojunctions, Twisted 2D Heterostructures, etc.)
- High-temperature Superconductive Materials
- Advanced Epitaxy (Remote Epitaxy, Quasi-van der Waals Epitaxy, etc.)
- Patterned Growth and Selective Area Growth
- Atomic Layer Deposition and Etching
- Heterogeneous Integration / Wafer Bonding
- In-situ Monitoring, Process Control and Reactor Modeling
- Nano-scale Characterization and Other Techniques
- Equipment & Safety, Environmental and Production Issues including Low-cost MOVPE