Tutorial
- Date: July 12 (Sun.)
- Time: 13:00-17:00
- Place: Room A (#301, 3F)
The Development of Metalorganic Chemical Vapor Deposition for Travelling on the Alloy Road
Prof. Russell D. Dupuis
Georgia Institute of Technology, USA
Prof. Russell D. Dupuis is an internationally recognized expert in III-V compound semiconductor epitaxial materials and optoelectronic and electronic devices. After graduating with his PhD in Electrical Engineering under Prof. Nick Holonyak, Jr. at the University of Illinois at Urbana-Champaign in 1973, he worked in industry at Texas Instruments (1973-1975) and Rockwell International (1975-1979). He was a Member of Technical Staff and a Distinguished Member of Technical Staff in the Physics Research Division at Bell Laboratories, Murray Hill NJ (1979-1989). Dupuis was appointed the Judson S. Swearingen Chaired Professor in Electrical and Computer Engineering at The University of Texas at Austin in 1989. He joined Georgia Institute of Technology in 2003 as full Professor in ECE and Materials Science and the newly established the Steve W. Chaddick Endowed Chair in Electro-Optics and a Georgia Research Alliance Eminent Scholar. He has worked on MOCVD growth of III-V devices since 1975 and on III-N devices since 1994. He has won many national and international awards for his work on compound semiconductors including the US National Medal of Technology, the IEEE Edison Medal, the John Bardeen Award, the Benjamin Franklin Medal, the Queen Elizabeth II Prize in Engineering, and the Japan Prize.
The invention of the bipolar transistor by John Bardeen and Walter H. Brattain at Bell Telephone Laboratories on December 16, 1947, turned the semiconductor from a “curiosity” to a “technology” and established fundamental principles of device operation that underpin the implementation of most of today’s electronic and optoelectronic devices. The demand for better control of the properties of the transistor structure led to innovations in the development of semiconductor epitaxial growth and thus to the first growth of III-V alloy compound semiconductor light-emitting devices by Nick Holonyak, Jr. in 1962. The development of metalorganic chemical vapor deposition has accelerated the commercialization of the III-V alloy compound semiconductors. In this talk, will discuss the development of the MOCVD process for the growth of these critically important materials.
Growth of 2D Semiconductors for Future Electronics
Prof. Kibum Kang
KAIST, Korea
Prof. Kibum Kang is an associate professor in the Department of Materials Science and Engineering at KAIST. He earned his B.S. and Ph.D. degrees in Materials Science and Engineering from POSTECH in 2007 and 2012, respectively. Following postdoctoral research at Cornell University and the University of Chicago from 2013 to 2017, he joined KAIST in 2018. His current research primarily focuses on the thin-film and selective growth of 2D semiconductors. He emphasizes their potential as next-generation semiconductor channels, aiming to optimize their integration into advanced electronic devices. He is also actively involved in industry as the CEO of TDS Innovation, a startup specializing in equipment and precursors for 2D semiconductor fabrication
This tutorial will review the importance of 2D semiconductors for next generation electronics and their potential as emerging channel materials for future technology nodes. The lecture will introduce the main streams of 2D semiconductor growth, focusing on scalable and industry relevant approaches including (1) MOCVD based epitaxial growth, (2) direct growth on target wafers, and (3) selective growth strategies for device integration. Particular emphasis will be placed on the fundamental understanding of interfaces between 2D semiconductors and 3D materials, as interface controlled nucleation and growth critically determine crystal quality, uniformity, and integration feasibility. Finally, the tutorial will highlight key remaining challenges and research opportunities in 2D semiconductor growth toward practical wafer scale manufacturing.
An introduction to optical in-situ metrology in MOVPE techniques, applications, and new trends
CTO Kolja Haberland
Laytec, Germany
Dr. Kolja Haberland is Chief Technology Officer (CTO) and member of the Management Board at LayTec AG, a leading manufacturer of integrated metrology for the compound semiconductor industry. He studied physics at the Technical University of Berlin, where in 2003 he obtained his PhD for his work on 'optical in-situ monitoring during epitaxial growth' - LayTec’s major field of application for many years. As co-founder of the company, he has been with LayTec since 1999. Over the years, he has contributed significantly to the rapid growth of this technology company, providing both industry and academia with integrated metrology solutions for epitaxy of LEDs, lasers, transistors, and solar cells.
Over the last decades optical in-situ metrology during MOVPE has become indispensable for understanding epitaxial growth, studying new materials, optimizing processes and controlling device growth. In this tutorial we will review the techniques that are commonly used for in-situ metrology in MOVPE and explain the physical background. We will show application examples of in-situ metrology for different material systems, including III-As/P and III-N . Special emphasis will be placed on the possibilities to analyze the measured data by using physical models and how to benchmark them by ex-situ metrology as well as the potential of in-situ metrology to support system health monitoring. In the final part, we will look at integration of in-situ metrology into control loops and how metrology is used post-epi in wafer processing.