Rump Session

Rump Sessions Table View

Rump Session 1

  • Time July 15 (Wed.), 2026, 19:00-20:30
  • Place Room A (Baekrok Hall A, 1F)
Topic Materials and Epitaxy Challenges in III-V Nitride Semiconductors for LEDs and Power Devices/HEMTs
Short
Description		 This rump session will provide an open forum for discussing recent advances, key technical challenges, and future perspectives in III-nitride semiconductors and their epitaxial growth technologies. Particular emphasis will be placed on epitaxy-related issues and enabling technologies required for the realization of high-performance LEDs, power devices, and RF electronics. The session aims to stimulate active discussion on materials growth, device integration, and emerging directions for next-generation III-nitride-based technologies.
Moderator
Nicolas Grandjean
Prof. Nicolas Grandjean
EPFL, Switzerland
Panelists
Isabel Streicher
Dr. Isabel Streicher
Cornell University, United States
Motoaki Iwaya
Prof. Motoaki Iwaya
Meijo University, Japan
Byeongchan So
Dr. Byeongchan So
Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany
Qian Sun
Prof. Qian Sun
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China
Narihito Okada
Prof. Narihito Okada
Yamaguchi University, Japan
Tim Wernicke
Prof. Tim Wernicke
Technische Universität Berlin, Institute of Physics and Astronomy, Germany
Sub-Topic
  • Defect Engineering in III-Nitride Epitaxy for Advanced Device Applications
  • Epitaxy-Driven Performance Limits in III-Nitride LEDs and Light-Emitting Devices
  • Current Challenges in GaN/AlGaN RF and Power Electronics
  • Micro-LED Technologies for Displays and Optical Interconnects

Rump Session 2

  • Time July 15 (Wed.), 2026, 19:00-20:30
  • Place Room B (Baekrok Hall B, 1F)
Topic Next big thing in MOCVD - 2D, ML/AI and MOCVD itself
Short
Description		 This session explores the dual frontiers of MOCVD: achieving wafer-scale 2D material epitaxy and the technological evolution of MOCVD systems and processes themselves. The discussion aims to provide a strategic roadmap for integrating emerging materials, machine learning/AI and industrial-scale manufacturing over the next decade.
Moderator
Joan Redwing
Prof. Joan Redwing
The Pennsylvania State University, USA
Panelists
Michael Heuken
Prof. Michael Heuken
RWTH Aachen University, Germany
Vanya Darakchieva
Prof. Vanya Darakchieva
Lund University, Sweden
Benjamin Groven
Dr. Benjamin Groven
IMEC, Belgium
Emanuele Pelucchi
Dr. Emanuele Pelucchi
Tyndall National Institute-University College Cork, Ireland
Suresh Sundaram
Prof. Suresh Sundaram
Georgia Tech Europe, France
Ryota Akaike
Prof. Ryota Akaike
Mie University, Japan
Sub-Topic
  • 1. Breaking the Barriers in 2D Epitaxy: Strategies for defect control and grain size enhancement in wafer-scale 2D material growth via MOCVD.
  • 2. The Rise of Autonomous MOCVD (Engineering AI): The role of Machine Learning and real-time feedback loops in accelerating process optimization and achieving "zero-defect" growth.
  • 3. Industrial Scalability & Sustainability: Bridging the gap between lab-scale breakthroughs and high-volume manufacturing (HVM) while addressing precursor efficiency and environmental impacts.
  • 4. Cultivating Future 'Growers: How to evolve MOCVD education and training to attract the next generation of researchers in an increasingly digitalized semiconductor era.