MOVPE Growth of UV-B Laser Diodes and Realization of Room-Temperature Continuous-Wave Operation
Prof. Motoaki Iwaya
Meijo University, Japan
AlN-based Heteroepitaxy and Devices by MOCVD
Prof. Xiaohang Li
KAUST, Saudi Arabia
Prof. Vanya Darakchieva
Lund University, Sweden
Epitaxial growth of III-nitride semiconductors and their LED structures
Prof. Zhe Zhuang
Nanjing University, China
Growth management of InP-based optoelectronic and microelectronic devices on InP-on-silicon (InPoSi) wafers
Dr. Jean Decobert
III-V Lab, France
Strategic MOCVD of Al-rich AlGaN HEMT on AlN Buffer for Extreme Environments
Prof. Okhyun Nam
Tech University of Korea, Republic of Korea
An old technology which still surprises. III-Vs MOVPE, precursors, surface processes and a lot of Zinc and Oxygen
Dr. Emanuele Pelucchi
Tyndall National Institute-University College Cork, Ireland
Enhancing Luminous Efficiency: The Breakthrough of PlayNitride’s Tantium® MicroLED
Dr. Ching-Liang (Rick), Lin
PlayNitride, Taiwan
Optical in-situ metrology and MOVPE: versatile
toolbox for laser device growth
Dr. Andre Maaßdorf
Ferdinand-Braun-Institute, Germany
Growth of core-shell microwire UV emitters: from UV-A toward UV-C
Prof. Christophe Durand
Univ. Grenoble Alpes, CEA, France
Polarization Manipulation in III-Nitride Light Emitting Devices
Prof. Xinqiang Wang
Peking University, China
In incorporation and strain relaxation
for efficient red InGaN micro-LEDs:
towards a RGB monolithic approach
Dr. Amélie Dussaigne
CEA-Leti, France
High efficiency GaN-based VCSELs with AlInN/GaN DBRs grown by MOVPE
Prof. Tetsuya Takeuchi
Meijo University, Japan
Scalable MOVPE van der Waals Epitaxy of hBN for III-Nitride Devices: From Mixed 2D/3D Heterostructures to RGB Micro-LEDs and Deep-UV LEDs
Prof. Abdallah Ougazzaden
Georgia Tech Europe, France
MOVPE growth of AlGaN with step-and-terrace structures on AlN templates
Prof. Ryota Akaike
Mie University, Japan
Remote epitaxy toward high-resolution and -efficiency super-realistic micro-LED displays
Prof. Young Joon Hong
Sungkyunkwan University, Republic of Korea
3D MOVPE enabling lateral integration of InGaN-based RGB micro-LEDs
Prof. Mitsuru Funato
Kyoto University, Japan
MOCVD of novel nitrides for
sustainable electronics – AlScN and AlYN.
Dr. Isabel Streicher
Cornell University, United States
MOCVD Growth of III‑Nitrides Using Novel Precursors
for HEMTs:
Challenges and Progress.
Dr. Byeongchan So
Fraunhofer Institute for Applied Solid State
Physics IAF, Freiburg, Germany
AlN-based Field-Effect Transistors Enabled by Polarization-Engineered Structures
Dr. Masanobu Hiroki
NTT, Inc., Japan
Recent Progress and Device Advantages of N-polar GaN/AlN HEMTs
Prof. Narihito Okada
Yamaguchi University, Japan
Telecom C-Band InAs Quantum Dots on GaAs for Quantum Technological Application
Prof. Michael Jetter
Institut für Halbleiteroptik und Funktionelle Grenzflächen
University Stuttgart, Germany
Dr. Benjamin Groven
IMEC, Belgium
Prof. Tim Wernicke
(TU Berlin)