MOVPE Growth of UV-B Laser Diodes and Realization of Room-Temperature Continuous-Wave Operation
Prof. Motoaki Iwaya
Meijo University, Japan
AlN-based Heteroepitaxy and Devices by MOCVD
Prof. Xiaohang Li
KAUST, Saudi Arabia
Atomic-Scale Interface and Polarity Engineering in III-Nitride and β-Ga2O3 Heterostructures by Hot-wall MOVPE
Prof. Vanya Darakchieva
Lund University, Sweden
Epitaxial growth of III-nitride semiconductors and their LED structures
Prof. Zhe Zhuang
Nanjing University, China
Growth management of InP-based optoelectronic and microelectronic devices on InP-on-silicon (InPoSi) wafers
Dr. Jean Decobert
III-V Lab, France
An old technology which still surprises. III-Vs MOVPE, precursors, surface processes and a lot of Zinc and Oxygen
Dr. Emanuele Pelucchi
Tyndall National Institute-University College Cork, Ireland
Enhancing Luminous Efficiency: The Breakthrough of PlayNitride’s Tantium® MicroLED
Dr. Ching-Liang (Rick), Lin
PlayNitride, Taiwan
Optical in-situ metrology and MOVPE: versatile
toolbox for laser device growth
Dr. Andre Maaßdorf
Ferdinand-Braun-Institute, Germany
Growth of core-shell microwire UV emitters: from UV-A toward UV-C
Prof. Christophe Durand
Univ. Grenoble Alpes, CEA, France
Polarization Manipulation in III-Nitride Light Emitting Devices
Prof. Xinqiang Wang
Peking University, China
In incorporation and strain relaxation
for efficient red InGaN micro-LEDs:
towards a RGB monolithic approach
Dr. Amélie Dussaigne
CEA-Leti, France
High efficiency GaN-based VCSELs with AlInN/GaN DBRs grown by MOVPE
Prof. Tetsuya Takeuchi
Meijo University, Japan
MOVPE growth of AlGaN with step-and-terrace structures on AlN templates
Prof. Ryota Akaike
Mie University, Japan
Remote epitaxy toward high-resolution and -efficiency super-realistic micro-LED displays
Prof. Young Joon Hong
Sungkyunkwan University, Republic of Korea
3D MOVPE enabling lateral integration of InGaN-based RGB micro-LEDs
Prof. Mitsuru Funato
Kyoto University, Japan
MOCVD of novel nitrides for
sustainable electronics – AlScN and AlYN.
Dr. Isabel Streicher
Cornell University, United States
MOCVD Growth of III‑Nitrides Using Novel Precursors
for HEMTs:
Challenges and Progress.
Dr. Byeongchan So
Fraunhofer Institute for Applied Solid State
Physics IAF, Freiburg, Germany
AlN-based Field-Effect Transistors Enabled by Polarization-Engineered Structures
Dr. Masanobu Hiroki
NTT, Inc., Japan
Recent Progress and Device Advantages of N-polar GaN/AlN HEMTs
Prof. Narihito Okada
Yamaguchi University, Japan
Telecom C-Band InAs Quantum Dots on GaAs for Quantum Technological Application
Prof. Michael Jetter
Institut für Halbleiteroptik und Funktionelle Grenzflächen
University Stuttgart, Germany
Opportunities of Halogen-Based Gas-Phase Reactants during Chemical Vapor Deposition of Transition Metal Dichalcogenides
Dr. Benjamin Groven
IMEC, Belgium
The Role of Point Defects in AlGaN-Based Far-UVC LEDs
Prof. Tim Wernicke
Technische Universität Berlin, Institute of Physics and Astronomy, Germany
Scalable MOVPE van der Waals Epitaxy of hBN for III-Nitride Devices: From Mixed 2D/3D Heterostructures to RGB Micro-LEDs and Deep-UV LEDs.
Prof. Suresh SUNDARAM
Georgia Tech Europe, France