[WeB1] July 15 (Wed.), 10:55-11:25
Room B
(Baekrok Hall B, 1F)
MOVPE Growth of UV-B Laser Diodes and Realization of Room-Temperature Continuous-Wave Operation
Prof. Motoaki Iwaya
Meijo University, Japan
[TuB2] July 14 (Tue.), 10:35-11:05
Room B (Baekrok Hall B, 1F)
AlN-based Heteroepitaxy and Devices by MOCVD
Prof. Xiaohang Li
KAUST, Saudi Arabia
[WeA1] July 15 (Wed.), 10:25-10:55
Room A (Baekrok Hall A, 1F)
Atomic-Scale Interface and Polarity Engineering in III-Nitride and β-Ga2O3 Heterostructures by Hot-wall MOVPE
Prof. Vanya Darakchieva
Lund University, Sweden
[WeA3] July 15 (Wed.), 15:35-16:05
Room A (Baekrok Hall A, 1F)
Epitaxial growth of III-nitride semiconductors and their LED structures
Prof. Zhe Zhuang
Nanjing University, China
[TuA1] July 14 (Tue.), 08:30-09:00
Room A (Baekrok Hall A, 1F)
Growth management of InP-based optoelectronic and microelectronic devices on InP-on-silicon (InPoSi) wafers
Dr. Jean Decobert
III-V Lab, France
[MoA3] July 13 (Mon.), 16:05-16:35
Room A (Baekrok Hall A, 1F)
An old technology which still surprises. III-Vs MOVPE, precursors, surface processes and a lot of Zinc and Oxygen
Dr. Emanuele Pelucchi
Tyndall National Institute-University College Cork, Ireland
[MoB2] July 13 (Mon.), 14:30-15:00
Room B (Baekrok Hall B, 1F)
Enhancing Luminous Efficiency: The Breakthrough of PlayNitride’s Tantium® MicroLED
Dr. Ching-Liang (Rick), Lin
PlayNitride, Taiwan
[MoB3] July 13 (Mon.), 16:05-16:35
Room B (Baekrok Hall B, 1F)
Optical in-situ metrology and MOVPE: versatile
toolbox for laser device growth
Dr. Andre Maaßdorf
Ferdinand-Braun-Institute, Germany
[FrA1] July 17 (Fri.), 10:20-10:50
Room A (Baekrok Hall A, 1F)
Growth of core-shell microwire UV emitters: from UV-A toward UV-C
Prof. Christophe Durand
Univ. Grenoble Alpes, CEA, France
[TuB3] July 14 (Tue.), 14:00-14:30
Room B (Baekrok Hall B, 1F)
Polarization Manipulation in III-Nitride Light Emitting Devices
Prof. Xinqiang Wang
Peking University, China
[MoB2] July 13 (Mon.), 14:00-14:30
Room B (Baekrok Hall B, 1F)
In incorporation and strain relaxation
for efficient red InGaN micro-LEDs:
towards a RGB monolithic approach
Dr. Amélie Dussaigne
CEA-Leti, France
[TuB1] July 14 (Tue.), 08:30-09:00
Room B (Baekrok Hall B, 1F)
High efficiency GaN-based VCSELs with AlInN/GaN DBRs grown by MOVPE
Prof. Tetsuya Takeuchi
Meijo University, Japan
[ThB1] July 16 (Thu.), 08:30-09:00
Room B (Baekrok Hall B, 1F)
MOVPE growth of AlGaN with step-and-terrace structures on AlN templates
Prof. Ryota Akaike
Mie University, Japan
[MoA2] July 13 (Mon.), 14:00-14:30
Room A (Baekrok Hall A, 1F)
Remote Epitaxy of Deformable and Stacktronic Devices
Prof. Young Joon Hong
Sungkyunkwan University, Republic of Korea
[WeB2] July 15 (Wed.), 13:30-14:00
Room B (Baekrok Hall B, 1F)
3D MOVPE enabling lateral integration of InGaN-based RGB micro-LEDs
Prof. Mitsuru Funato
Kyoto University, Japan
[FrB1] July 17 (Fri.), 10:20-10:50
Room B (Baekrok Hall B, 1F)
MOCVD of novel nitrides for
sustainable electronics – AlScN and AlYN.
Dr. Isabel Streicher
Cornell University, United States
[MoB1] July 13 (Mon.), 11:45-12:15
Room B (Baekrok Hall B, 1F)
MOCVD Growth of III‑Nitrides Using Novel Precursors
for HEMTs:
Challenges and Progress.
Dr. Byeongchan So
Fraunhofer Institute for Applied Solid State
Physics IAF, Freiburg, Germany
[WeA2] July 15 (Wed.), 13:30-14:00
Room A (Baekrok Hall A, 1F)
AlN-based Field-Effect Transistors Enabled by Polarization-Engineered Structures
Dr. Masanobu Hiroki
NTT, Inc., Japan
[MoB1] July 13 (Mon.), 11:15-11:45
Room B (Baekrok Hall B, 1F)
Recent Progress and Device Advantages of N-polar GaN/AlN HEMTs
Prof. Narihito Okada
Yamaguchi University, Japan
[TuA2] July 14 (Tue.), 10:35-11:05
Room A (Baekrok Hall A, 1F)
Telecom C-Band InAs Quantum Dots on GaAs for Quantum Technological Application
Prof. Michael Jetter
Institut für Halbleiteroptik und Funktionelle Grenzflächen
University Stuttgart, Germany
[TuA3] July 14 (Tue.), 14:00-14:30
Room A (Baekrok Hall A, 1F)
Opportunities of Halogen-Based Gas-Phase Reactants during Chemical Vapor Deposition of Transition Metal Dichalcogenides
Dr. Benjamin Groven
IMEC, Belgium
[WeB1] July 15 (Wed.), 10:25-10:55
Room B (Baekrok Hall B, 1F)
The Role of Point Defects in AlGaN-Based Far-UVC LEDs
Prof. Tim Wernicke
Technische Universität Berlin, Institute of Physics and Astronomy, Germany
[MoA1] July 13 (Mon.), 11:45-12:15
Room A (Baekrok Hall A, 1F)
Scalable MOVPE van der Waals Epitaxy of hBN for III-Nitride Devices: From Mixed 2D/3D Heterostructures to RGB Micro-LEDs and Deep-UV LEDs.
Prof. Suresh SUNDARAM
Georgia Tech Europe, France
[MoA1] July 13 (Mon.), 11:15-11:45
Room A (Baekrok Hall A, 1F)
From MOCVD to AI-Driven Metrology: Enabling Scalable Production and Quality Control of Wafer-Scale 2D Semiconductors
Professor Xiaotain Zhang
Suzhou Laboratory, China